stack gate

英 [stæk ɡeɪt]

美 [stæk ɡeɪt]

网络叠层栅; 堆叠闸

The result shows that N/ O stack gate dielectrics have much longer lifetime than pure oxide gate dielectrics of the same EOT, which also indicates that N/ O stack gate dielectrics have better reliability than the pure oxide gate dielectrics do.
结果表明，Si3N4/SiO2叠层栅介质比同样EOT的纯SiO2栅介质有更长的寿命，这说明Si3N4/SiO2叠层栅介质有更高的可靠性。
The simulation results indicate that this structure of strained Si/ SiGe HCMOS with vertical stack and a common gate is appropriate, and the performance is improved.
结果表明所设计的垂直层叠共栅结构应变Si/SiGeHCMOS结构合理、器件性能提高。
Ultra-Thin Si_3N_4/ SiO_2 ( N/ O) Stack Gate Dielectrics and Devices
超薄Si3N4/SiO2（N/O）stack栅介质及器件
The results show that compared with the pure oxide gate dielectrics of the same EOT, N/ O stack gate dielectrics have much better performance on the aspects of tunneling leakage current, SILC characteristics, and gate dielectrics lifetime.
结果表明，同样EOT的Si3N4/SiO2stack栅介质和纯SiO2栅介质比较，前者在栅隧穿漏电流、抗SILC性能、栅介质寿命等方面都远优于后者。
By solving the Poisson equation of the depletion region of high k gate dielectric and gate insulator region, the threshold voltage model of stack high k gate dielectric is got.
同时，通过求解高k栅介质耗尽区与栅绝缘层区域的泊松方程，得到叠层高k栅介质阈值电压模型。